99.999% High Purity Monocrystalline Silicon Sputtering Target Plate /Silicon Ceramic Target

• Application: Industrial
• Formula: Zirconium
• Classification: Metal Traget
• Model NO.: CYT-MoSi
• Grade Standard: Industrial Grade
• Certification: ISO
• Shape: Rotary,Flat,Round
• Transport Package: Wooden Box
• Specification: Customized Size
• Trademark: CANYUAN
• Origin: China
• Production Capacity: 1000PCS

Product Description

 

Silicon has two allotropes, one is crystalline silicon and another one is amorphous silicon. Crystalline silicon is steel gray and amorphous silicon is black. Crystalline silicon is an atomic crystal, hard and shiny, and has semiconductor properties. Mainly used to make high-purity semiconductors, high-temperature resistant materials, optical fiber communication materials, organic silicon compounds, alloys, etc., and are widely used in aerospace, electronics and electrical, construction, transportation, energy, chemical industry, textile, food, light industry, medical , agriculture and other industries.

Silicon sputtering targets can be divided into two types: single crystal and polycrystalline. We produce planar silicon sputtering targets via the Czochralski crystal growth method. Mainly used in semiconductor chips, flat-panel liquid crystal displays (LCD), decorative and functional coating industry, solar panels, data storage industry (optical disk industry), optical communication industry, glass coating (building glass and automotive glass) industry, corrosion resistance and wear resistance (Surface modification) and other fields.

Commonly used silicon target shapes include planar and rotating types; specifications and purity can be customized. The picture below is the composition analysis table of 5N high-purity silicon target:

Chromium  Targets Specification
Application	PVD sputtering materials
Material	Silicon
Purity	4N5
Size	customized
Thickness	customized
Shape	Rotary Chromium sputtering Target, Ring type, sheet type, Plat type and Tube type
Density	2.33g/cm3
Melting Point	2355ºC
Produce method	HIP

Our Advantage

Operation Process

Packing Picture

Application:

Relating Product

Material	Purity (N)	Components (wt%)	Density	Melting  Point	Thermal Conductivity (Wm-1K-1)	Coefficient of  expansion (10-6k-1)	Production  Process
Al	3N	-	2.7	660	235	23.1	Smelting
Cr	3N5	-	7.22	1907	94	4.9	HIP,Smelting
Cu	4N	-	8.9	1084	400	16.5	Smelting
Ni	3N5	-	4.5	1453	90	13	Smelting
Ti	3N	-	4.5	1668	15.2	9.4	Smelting
Zr	3N	-	6.49	1852	0.227	-	Smelting
Si	4N	-	2.33	1414	150	2.6	Sintering&Spray
Ag	4N	-	10.49	961.93	429	19	Smelting
C	4N	-	2.23	3850±50	151	-	HIP
TiAl	3N5	AS REQUESTED	-	-	-	-	Smelting
InSn	4N	AS REQUESTED	-	-	-	-	Casting
CrSi	4N	AS REQUESTED	-	-	-	-	Spray
CrW	4N	AS REQUESTED	16.7	3017	57	6.3	HIP
NiCr	3N	AS REQUESTED	-	-	-	-	Smelting
NiV	3N	97:3	-	-	-	-	Smelting
WC	3N	-	15.77	2870	110	5.5	Sintering&Spray
NbOx	4N	-	4.6	1460	5	1.5	Sintering&Spray