Customized Size High Purity Carbon Graphite Sputtering Targets 99.99% Bonding Copper Target

Product Details
Application: Industrial
Formula: Carbon
Classification: Ceramic Target
Gold Member Since 2023

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  • Customized Size High Purity Carbon Graphite Sputtering Targets 99.99% Bonding Copper Target
  • Customized Size High Purity Carbon Graphite Sputtering Targets 99.99% Bonding Copper Target
  • Customized Size High Purity Carbon Graphite Sputtering Targets 99.99% Bonding Copper Target
  • Customized Size High Purity Carbon Graphite Sputtering Targets 99.99% Bonding Copper Target
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Basic Info.

Model NO.
CYT-C
Certification
ISO
Shape
Rotary ,Flat,Round
Transport Package
Wooden Box
Specification
Customized Size
Trademark
CANYUAN
Origin
China
Production Capacity
1000PCS

Product Description


 
Customized Size High Purity Carbon Graphite Sputtering Targets 99.99% Bonding Copper TargetGraphite targets are mainly made through the carbonization process.
First, different materials (such as graphite, ceramics, etc.) are carbonized into graphite at high temperatures and then made into target materials. The main characteristics of graphite targets are excellent physical and chemical properties such as high purity, high density and good electrical conductivity.
Specification
Application PVD sputtering materials
Material Graphite Targets
Purity 99.9%~99.999%,3N,3N5,4N,5N,etc
Size customized
Thickness customized
Shape Pellets, Granules, Planar, Round, Plate, Rotary, Bar , According to customer request
Density 3.51g/cm3
Melting Point 3547ºC
Produce method HIP
Customized Size High Purity Carbon Graphite Sputtering Targets 99.99% Bonding Copper Target
Customized Size High Purity Carbon Graphite Sputtering Targets 99.99% Bonding Copper TargetCustomized Size High Purity Carbon Graphite Sputtering Targets 99.99% Bonding Copper TargetOur Advantage

Customized Size High Purity Carbon Graphite Sputtering Targets 99.99% Bonding Copper TargetCustomized Size High Purity Carbon Graphite Sputtering Targets 99.99% Bonding Copper TargetOperation Process
Customized Size High Purity Carbon Graphite Sputtering Targets 99.99% Bonding Copper TargetCustomized Size High Purity Carbon Graphite Sputtering Targets 99.99% Bonding Copper Target
Application:
Customized Size High Purity Carbon Graphite Sputtering Targets 99.99% Bonding Copper Target
Relating Product
Material Purity
(N)
Components
(wt%)
Density Melting
 Point
Thermal
Conductivity
(Wm-1K-1)
Coefficient of
 expansion
(10-6k-1)
Production
 Process
Al 3N - 2.7 660 235 23.1 Smelting
Cr 3N5 - 7.22 1907 94 4.9 HIP,Smelting
Cu 4N - 8.9 1084 400 16.5 Smelting
Ni 3N5 - 4.5 1453 90 13 Smelting
Ti 3N - 4.5 1668 15.2 9.4 Smelting
Zr 3N - 6.49 1852 0.227 - Smelting
Si 4N - 2.33 1414 150 2.6 Sintering&Spray
Ag 4N - 10.49 961.93 429 19 Smelting
C 4N - 2.23 3850±50 151 - HIP
TiAl 3N5 AS REQUESTED - - - - Smelting
InSn 4N AS REQUESTED - - - - Casting
CrSi 4N AS REQUESTED - - - - Spray
CrW 4N AS REQUESTED 16.7 3017 57 6.3 HIP
NiCr 3N AS REQUESTED - - - - Smelting
NiV 3N 97:3 - - - - Smelting
WC 3N - 15.77 2870 110 5.5 Sintering&Spray
NbOx 4N - 4.6 1460 5 1.5 Sintering&Spray
 

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