4n ATO Target Sno2: Sb2o3 Rotary Targets/Flat Targets

• Application: Industrial
• Formula: Sno2:Sb2o3
• Classification: Ceranic Traget
• Model NO.: CYT-ATO
• Grade Standard: Industrial Grade
• Certification: ISO
• Shape: Rotary,Flat,Round
• Transport Package: Wooden Box
• Specification: Customized Size
• Trademark: CANYUAN
• Origin: China
• Production Capacity: 1000PCS

Product Description

PRODUCT DESCRIPTION

ATO target material is tin oxide antimony target material, which is mainly composed of tin oxide doped with antimony oxide. It is a N-type semiconductor material and a new type of transparent conductive oxide material developed in recent years. It has excellent optical, electrical, and thermal properties.

It has excellent properties such as large forbidden band width (≥3.6eV), good electrical conductivity, high visible light transmittance, radiation resistance, and good thermal stability. The sintering of ATO target materials is usually carried out using discharge plasma sintering method

(SPS), the size and proportion are customized according to customer requirements.

Technical parameters

Purity: 99.99%; common ratio: SnO2:Sb2O3=90:10(wt%), SnO2:Sb2O3=95:5(wt%).

Application areas: flat panel displays, solar cells, and other optoelectronic materials.

We can make flat ATO and rotary sputtering targets.
Specification and purity can be customized.
The description and composition analysis table of 4N ATO as below:

Targets Specification
Application	PVD sputtering materials
Material	ATO (SnO2:Sb2O3)
Purity	4N
Size	customized
Thickness	customized
Shape	Rotary sputtering Target, Ring type, sheet type, Plat type and Tube type
Density	-g/cm3
Melting Point	-ºC
Produce method	HIP

Our Advantage

Operation Process

Packing Picture

Application:

Relating Product

Material	Purity (N)	Components (wt%)	Density	Melting  Point	Thermal Conductivity (Wm-1K-1)	Coefficient of  expansion (10-6k-1)	Production  Process
Al-Alloy	5N	-	2.7	660	235	23.1	Smelting
Cr	3N5	-	7.22	1907	94	4.9	HIP
Cu	4N	-	8.9	1084	400	16.5	Smelting
Mo-alloy	3N5	-	10.28	2623	139	4.8	HIP
Nb	4N	-	8.6	2477	54	7.3	Smelting
Ta	4N	-	16.7	3017	57	6.3	Smelting
Si	4N	-	2.33	1414	150	2.6	Sintering&Spray
TI	5N	-	4.5	1670	22	8.6	Smelting
W	4N	-	19.25	3422	174	4.5	HIP
AZO	3N5	98:2	5.6	1975	22	1.5	Sintering
ITO	4N	90:10	7.15	2000	15	2.0	Sintering
GZO	3N5	AS REQUESTED	7.15	-	-	-	Sintering
IGZO	4N	AS REQUESTED	-	-	-	-	Sintering
NbOx	4N	-	4.6	1460	5	1.5	Sintering&Spray
TIOx	4N	-	4.23	1800	4	7.14	Sintering&Spray