Innovations in 4n Titanium Rotary Target Technology for Advanced Semiconductor Fabrication

Product Details
Application: Industrial
Formula: Titanium
Classification: Metal Traget
Gold Member Since 2023

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  • Innovations in 4n Titanium Rotary Target Technology for Advanced Semiconductor Fabrication
  • Innovations in 4n Titanium Rotary Target Technology for Advanced Semiconductor Fabrication
  • Innovations in 4n Titanium Rotary Target Technology for Advanced Semiconductor Fabrication
  • Innovations in 4n Titanium Rotary Target Technology for Advanced Semiconductor Fabrication
  • Innovations in 4n Titanium Rotary Target Technology for Advanced Semiconductor Fabrication
  • Innovations in 4n Titanium Rotary Target Technology for Advanced Semiconductor Fabrication
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Basic Info.

Model NO.
CYT-TI
Grade Standard
Industrial Grade
Certification
ISO
Shape
Rotary,Flat,Round
Transport Package
Wooden Box
Specification
Customized Size
Trademark
CANYUAN
Origin
China
Production Capacity
1000PCS

Product Description


 
Innovations in 4n Titanium Rotary Target Technology for Advanced Semiconductor FabricationThe titanium target has some excellent characteristics of titanium itself, such as excellent corrosion resistance, high strength and low density, as well as good biocompatibility, high temperature resistance and so on.
In addition, because the titanium target is "struck" during the film deposition process to produce titanium atoms, its surface quality has a great influence on the quality of the deposited titanium film.

Therefore, titanium targets usually need to be polished to achieve a surface that is sufficiently flat and free of microscopic cracks and impurities.
In this way, high sputtering rate and high purity of the film can be guaranteed during used.

Titanium target is mainly used for sputtering coating, which can deposit a layer of film on the surface of various materials to improve their physical and chemical properties. 
Titanium target also has good electrical conductivity and magnetic properties, and can be used for making various electronic devices and components.
 
 Titanium  Targets Specification
Application PVD sputtering materials
Material Titanium
Purity Titanium
Size customized
Thickness customized
Shape Rotary sputtering Target, Ring type, sheet type, Plat type and Tube type
Density 4.5g/cm3
Melting Point 1668ºC
Produce method HIP-pp

Our Advantage
Innovations in 4n Titanium Rotary Target Technology for Advanced Semiconductor Fabrication
Innovations in 4n Titanium Rotary Target Technology for Advanced Semiconductor Fabrication


Operation Process
Innovations in 4n Titanium Rotary Target Technology for Advanced Semiconductor Fabrication
Innovations in 4n Titanium Rotary Target Technology for Advanced Semiconductor Fabrication

Packing Picture
Innovations in 4n Titanium Rotary Target Technology for Advanced Semiconductor Fabrication
Innovations in 4n Titanium Rotary Target Technology for Advanced Semiconductor Fabrication
Innovations in 4n Titanium Rotary Target Technology for Advanced Semiconductor Fabrication


Application:
Innovations in 4n Titanium Rotary Target Technology for Advanced Semiconductor Fabrication
Innovations in 4n Titanium Rotary Target Technology for Advanced Semiconductor Fabrication
Innovations in 4n Titanium Rotary Target Technology for Advanced Semiconductor Fabrication

Relating Product
Material Purity
(N)
Components
(wt%)
Density Melting
 Point
Thermal
Conductivity
(Wm-1K-1)
Coefficient of
 expansion
(10-6k-1)
Production
 Process
Al 3N - 2.7 660 235 23.1 Smelting
Cr 3N5 - 7.22 1907 94 4.9 HIP,Smelting
Cu 4N - 8.9 1084 400 16.5 Smelting
Ni 3N5 - 4.5 1453 90 13 Smelting
Ti 3N - 4.5 1668 15.2 9.4 Smelting
Zr 3N - 6.49 1852 0.227 - Smelting
Si 4N - 2.33 1414 150 2.6 Sintering&Spray
Ag 4N - 10.49 961.93 429 19 Smelting
C 4N - 2.23 3850±50 151 - HIP
TiAl 3N5 AS REQUESTED - - - - Smelting
InSn 4N AS REQUESTED - - - - Casting
CrSi 4N AS REQUESTED - - - - Spray
CrW 4N AS REQUESTED 16.7 3017 57 6.3 HIP
NiCr 3N AS REQUESTED - - - - Smelting
NiV 3N 97:3 - - - - Smelting
WC 3N - 15.77 2870 110 5.5 Sintering&Spray
NbOx 4N - 4.6 1460 5 1.5 Sintering&Spray

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