Azo Targets: The Perfect Combination of Excellent Conductivity and High Transparency

• Application: Industrial
• Formula: ZnO:Al2O3
• Classification: Ceranic Traget
• Model NO.: CYT-AZO
• Grade Standard: Industrial Grade
• Certification: ISO
• Shape: Rotary,Flat,Round
• Transport Package: Wooden Box
• Specification: Customized Size
• Trademark: CANYUAN
• Origin: China
• Production Capacity: 1000PCS

Product Description

PRODUCT DESCRIPTION

AZO target is a zinc oxide aluminum target, mainly composed of zinc oxide doped with aluminum oxide, which is an N-type semiconductor material. The sintering of AZO target is usually carried out using atmospheric pressure sintering, hot pressing sintering, and atmosphere sintering.

The most common sintering method is atmospheric pressure sintering; common forming methods include dry pressing and cold isostatic pressing.

The AZO rotating target is made by cold-pressing and sintering process, and is bound to the back tube. The size can be customized according to customer requirements.

The AZO planar target is made by using the grouting sintering process and is cast on the back plate. The size can be customized according to customer requirements.

Technical parameters

Purity: 99.95%, 99.99%; resistivity (20C): ≤1x10Ω.cm.

Common ratio: ZnO:Al2O3=98:2 (wt%).

Application areas: electrodes for thin-film solar cells, transparent conductive glass and flexible films, plasma displays, infrared reflection and protection, and other fields.

We can make flat AZO and rotary sputtering targets.
Specification and purity can be customized.
The description and composition analysis table of 4N AZO as below:

Targets Specification
Application	PVD sputtering materials
Material	AZO (ZnO:Al2O3)
Purity	4N
Size	customized
Thickness	customized
Shape	Rotary sputtering Target, Ring type, sheet type, Plat type and Tube type
Density	-g/cm3
Melting Point	-ºC
Produce method	HIP

Our Advantage

Operation Process

Packing Picture

Application:

Relating Product

Material	Purity (N)	Components (wt%)	Density	Melting  Point	Thermal Conductivity (Wm-1K-1)	Coefficient of  expansion (10-6k-1)	Production  Process
Al-Alloy	5N	-	2.7	660	235	23.1	Smelting
Cr	3N5	-	7.22	1907	94	4.9	HIP
Cu	4N	-	8.9	1084	400	16.5	Smelting
Mo-alloy	3N5	-	10.28	2623	139	4.8	HIP
Nb	4N	-	8.6	2477	54	7.3	Smelting
Ta	4N	-	16.7	3017	57	6.3	Smelting
Si	4N	-	2.33	1414	150	2.6	Sintering&Spray
TI	5N	-	4.5	1670	22	8.6	Smelting
W	4N	-	19.25	3422	174	4.5	HIP
AZO	3N5	98:2	5.6	1975	22	1.5	Sintering
ITO	4N	90:10	7.15	2000	15	2.0	Sintering
GZO	3N5	AS REQUESTED	7.15	-	-	-	Sintering
IGZO	4N	AS REQUESTED	-	-	-	-	Sintering
NbOx	4N	-	4.6	1460	5	1.5	Sintering&Spray
TIOx	4N	-	4.23	1800	4	7.14	Sintering&Spray